Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We exploit this sen
sitivity to obtain a novel tool for better understanding the role that background impurities play in the electrical properties of high-mobility AlGaAs/GaAs heterostructures and nanoscale devices. In particular, we report the remarkable ability to first alter the disorder potential in an undoped AlGaAs/GaAs heterostructure by optical illumination and then reset it back to its initial configuration by room temperature thermal cycling in the dark. We attribute this behavior to a mixture of C background impurities acting as shallow acceptors and deep trapping by Si impurities. This alter and reset capability, not possible in modulation-doped heterostructures, offers an exciting route to studying how scattering from even small densities of charged impurities influences the properties of nanoscale semiconductor devices.
