Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray Photoemission Spectroscopy and Ultraviolet Photoemission Spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators.

Thermal rectification and negative differential thermal resistance in lattices with mass gradient

We study thermal properties of one dimensional(1D) harmonic and anharmonic lattices with mass gradient. It is found that the temperature gradient can be built up in the 1D harmonic lattice with mass gradient due to the existence of gradons. The heat flow is asymmetric in the anharmonic lattices with mass gradient. Moreover, in a certain temperature region the {it negative differential thermal resistance} is observed. Possible applications in constructing thermal rectifier and thermal transistor by using the graded material are discussed.