The hysteresis observed in the magnetoresistance of bilayer 2D systems in the quantum Hall regime is generally attributed to the long time constant for charge transfer between the 2D systems due to the very low conductivity of the quantum Hall bulk s
tates. We report electrometry measurements of a bilayer 2D system that demonstrate that the hysteresis is instead due to non-equilibrium induced current. This finding is consistent with magnetometry and electrometry measurements of single 2D systems, and has important ramifications for understanding hysteresis in bilayer 2D systems.
We discuss the development of a sensitive electrometer that utilizes a two-dimensional electron gas (2DEG) in the quantum Hall regime. As a demonstration, we measure the evolution of the Landau levels in a second, nearby 2DEG as the applied perpendic
ular magnetic field is changed, and extract an effective mass for electrons in GaAs that agrees within experimental error with previous measurements.
We have embedded an AlGaAs/GaAs based, gated 2D hole system (2DHS) into an impedance transformer $LC$ circuit, and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measuremen
ts of 2D systems at mK temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line. The model gives a qualitative understanding of the experimental results. As an example, we use our method to map out the Landau level evolution in a 2DHS as a function of magnetic field and gate voltage.
