The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particul
arly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material : controlling DW nucleation and stopping DW propagation at the edge of the electrode.
We consider spherically symmetric distributions of anisotropic fluids with a central vacuum cavity, evolving under the condition of vanishing expansion scalar. Some analytical solutions are found satisfying Darmois junction conditions on both delimit
ing boundary surfaces, while some others require the presence of thin shells on either (or both) boundary surfaces. The solutions here obtained model the evolution of the vacuum cavity and the surrounding fluid distribution, emerging after a central explosion. This study complements a previously published work where modeling of the evolution of such kind of systems was achieved through a different kinematical condition.
We study the dynamical instability of a spherically symmetric anisotropic fluid which collapses adiabatically under the condition of vanishing expansion scalar. The Newtonian and post Newtonian regimes are considered in detail. It is shown that withi
n those two approximations the adiabatic index $Gamma_1$, measuring the fluid stiffness, does not play any role. Instead, the range of instability is determined by the anisotropy of the fluid pressures and the radial profile of the energy density, independently of its stiffness, in a way which is fully consistent with results previously obtained from the study on the Tolman mass.
We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Cur
ie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature towards higher values and a reduction of the coercive field can be achieved in photo-sensitized (Ga,Mn)As. A mayor change in the XPS spectrum of (Ga,Mn)As indicates the appearance of occupied levels in the energy range corresponding to the (Ga,Mn)As valence band states upon adsorption of fluorescein. This points towards a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure.
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depen
d on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors.
The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta) domain wal
ls with considerably different dynamic behavior are observed. While the (90+Delta) reversal is identified to be propagation dominated with a small number of domain walls, the case of (90-Delta) reversal includes the nucleation of many domain walls. The domain wall nucleation/propagation energy for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the (90+Delta) mode.
