Topological properties and the dynamical crossover from mixed-valence to Kondo-lattice behavior in golden phase of SmS

We have investigated temperature-dependent behaviors of electronic structure and resistivity in a mixed-valent golden phase of SmS, based on the dynamical mean-field theory band structure calculations. Upon cooling, the coherent Sm 4$f$ bands are formed to produce the hybridization induced pseudogap near the Fermi level, and accordingly the topology of Fermi surface is changed to exhibit a Lifshitz-like transition. The surface states emerging in the bulk gap region are found to be not topologically protected states but just typical Rashba spin-polarized states, indicating that SmS is not a topological Kondo semimetal. From the analysis of anomalous resistivity behavior in SmS, we have identified universal energy scales, which characterize the Kondo/mixed-valent semimetallic systems.

Universal metastability of the low-spin state in Co$^{2+}$ systems: non-Mott type pressure-induced spin-state transition in CoCl$_{2}$

We have investigated the pressure-induced spin-state transition in Co$^{2+}$ systems in terms of a competition between the Hunds exchange energy ($J$) and the crystal-field splitting ($Delta_{CF}$). First, we show the universal metastability of the low-spin state in octahedrally coordinated Co$^{2+}$ systems. Then we present the strategy to search for a Co$^{2+}$ system, for which the mechanism of spin-state and metal-insulator transitions is governed not by the Mott physics but by $J$ vs. $Delta_{CF}$ physics. Using CoCl$_{2}$ as a prototypical Co$^{2+}$ system, we have demonstrated the pressure-induced spin-state transition from high-spin to low-spin, which is accompanied with insulator-to-metal and antiferromagnetic to half-metallic ferromagnetic transitions. Combined with metastable character of Co$^{2+}$ and the high compressibility nature of CoCl$_{2}$, the transition pressure as low as 27 GPa can be identified on the basis of $J$ vs. $Delta_{CF}$ physics.

Effects of strain on the electronic structure of VO_2

We present cluster-DMFT (CTQMC) calculations based on a downfolded tight-binding model in order to study the electronic structure of vanadium dioxide (VO_2) both in the low-temperature (M_1) and high-temperature (rutile) phases. Motivated by the recent efforts directed towards tuning the physical properties of VO_2 by depositing films on different supporting surfaces of different orientations we performed calculations for different geometries for both phases. In order to investigate the effects of the different growing geometries we applied both contraction and expansion for the lattice parameter along the rutile c-axis in the 3-dimensional translationally invariant systems miming the real situation. Our main focus is to identify the mechanisms governing the formation of the gap characterizing the M_1 phase and its dependence on strain. We found that the increase of the band-width with compression along the axis corresponding to the rutile c-axis is more important than the Peierls bonding-antibonding splitting.