We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave circuitry as we
ll as the supporting membrane for the Transition-Edge Sensor (TES) bolometers. The orthomode transducer (OMT) is realized as a symmetric structure and on-chip filters are employed to define the detection bandwidth. A hybridized integrated enclosure reduces the high-frequency THz mode set that can couple to the TES bolometers. An implementation of the detector architecture at Q-band achieves 90% efficiency in each polarization. The design is scalable in both frequency coverage, 30-300 GHz, and in number of detectors with uniform characteristics. Hence, the detectors are desirable for ground-based or space-borne instruments that require large arrays of efficient background-limited cryogenic detectors.
