Spontaneous Dissociation of Co2(CO)8 and Autocatalytic growth of Co on SiO2 : A Combined Experimental and Theoretical Investigation

We present experimental results and theoretical simulations of the adsorption behavior of the metal-organic precursor Co2(CO)8 on SiO2 surfaces after application of two different pre-treatment steps, namely by air plasma cleaning or a focused electron beam pre-irradiation. We observe a spontaneous dissociation of the precursor molecules as well as auto-deposition of cobalt on the pre-treated SiO2 surfaces. We also find that the differences in metal content and relative stability of these deposits depend on the pre-treatment conditions of the substrate. Transport measurements of these deposits are also presented. We are led to assume that the degree of passivation of the SiO2 surface by hydroxyl groups is an important controlling factor in the dissociation process. Our calculations of various slab settings using dispersion corrected density functional theory support this assumption. We observe physisorption of the precursor molecule on a fully hydroxylated SiO2 surface (untreated surface) and chemisorption on a partially hydroxylated SiO2 surface (pre-treated surface) with a spontaneous dissociation of the precursor molecule. In view of these calculations, we discuss the origin of this dissociation and the subsequent autocatalysis.

Interaction of W(CO)$_6$ with SiO$_2$ Surfaces -- A Density Functional Study

The interaction of tungsten hexacarbonyl W(CO)$_6$ precursor molecules with SiO$_2$ substrates is investigated by means of density functional theory calculations with and without inclusion of long range van der Waals interactions. We consider two different surface models, a fully hydroxylated and a partially hydroxylated SiO$_2$ surface, corresponding to substrates under different experimental conditions. For the fully hydroxylated surface we observe only a weak interaction between the precursor molecule and the substrate with physisorption of W(CO)$_6$. Inclusion of van der Waals corrections results in a stabilization of the molecules on this surface, but does not lead to significant changes in the chemical bonding. In contrast, we find a spontaneous dissociation of the precursor molecule on the partially hydroxylated SiO$_2$ surface where chemisorption of a W(CO)$_5$ fragment is observed upon removal of one of the CO ligands from the precursor molecule. Irrespective of the hydroxylation, the precursor molecule prefers binding of more than one of its CO ligands. In the light of these results, implications for the initial growth stage of tungsten nano-deposits on SiO$_2$ in an electron beam induced deposition process are discussed.