Future giant liquid argon (LAr) time projection chambers (TPCs) require a purity of better than 0.1 parts per billion (ppb) to allow the ionised electrons to drift without significant capture by any electronegative impurities. We present a comprehens
ive study of the effects of electronegative impurity on gaseous and liquid argon scintillation light, an analysis of the efficacy of various purification chemicals, as well as the Liverpool LAr setup, which utilises a novel re-circulation purification system. Of the impurities tested - Air, O_2, H_2O, N_2 and CO_2 in the range of between 0.01 ppm to 1000 ppm - H_2O was found to have the most profound effect on gaseous argon scintillation light, and N_2 was found to have the least. Additionally, a correlation between the slow component decay time and the total energy deposited with 0.01 ppm - 100 ppm O_2 contamination levels in liquid argon has been established. The superiority of molecular sieves over anhydrous complexes at absorbing Ar gas, N_2 gas and H_2O vapour has been quantified using BET isotherm analysis. The efficiency of Cu and P_2O5 at removing O_2 and H_2O impurities from 1 bar N6 argon gas at both room temperature and -130 ^oC was investigated and found to be high. A novel, highly scalable LAr re-circulation system has been developed. The complete system, consisting of a motorised bellows pump operating in liquid and a purification cartridge, were designed and built in-house. The system was operated successfully over many days and achieved a re-circulation rate of 27 litres/hour and high purity.
For the first time secondary scintillation, generated within the holes of a thick gas electron multiplier (TGEM) immersed in liquid argon, has been observed and measured using a silicon photomultiplier device (SiPM). 250 electron-ion pairs, generated
in liquid argon via the interaction of a 5.9KeV Fe-55 gamma source, were drifted under the influence of a 2.5KV/cm field towards a 1.5mm thickness TGEM, the local field sufficiently high to generate secondary scintillation light within the liquid as the charge traversed the central region of the TGEM hole. The resulting VUV light was incident on an immersed SiPM device coated in the waveshifter tetraphenyl butadiene (TPB), the emission spectrum peaked at 460nm in the high quantum efficiency region of the device. For a SiPM over-voltage of 1V, a TGEM voltage of 9.91KV, and a drift field of 2.5KV/cm, a total of 62 photoelectrons were produced at the SiPM device per Fe-55 event, corresponding to an estimated gain of 150 photoelectrons per drifted electron.
The performance of a silicon photomultiplier has been assessed at low temperature in order to evaluate its suitability as a scintillation readout device in liquid argon particle physics detectors. The gain, measured as 2.1E6 for a constant over-volta
ge of 4V was measured between 25degC and -196degC and found to be invariant with temperature, the corresponding single photoelectron dark count rate reducing from 1MHz to 40Hz respectively. Following multiple thermal cycles no deterioration in the device performance was observed. The photon detection efficiency (PDE) was assessed as a function of photon wavelength and temperature. For an over-voltage of 4V, the PDE, found again to be invariant with temperature, was measured as 25% for 460nm photons and 11% for 680nm photons. Device saturation due to high photon flux rate, observed both at room temperature and -196degC, was again found to be independent of temperature. Although the output signal remained proportional to the input signal so long as the saturation limit was not exceeded, the photoelectron pulse resolution and decay time increased slightly at -196degC.
