We consider resonant scatterers with large scattering cross-sections in graphene that are produced by a gated disk or a vacancy, and show that a gated ring can be engineered to produce an efficient electron cloak. We also demonstrate that this same s
cheme can be applied to tune the direction of electron flow. Our analysis is based on a partial-wave expansion of the electronic wave-functions in the continuum approximation, described by the Dirac equation. Using a symmetrized version of the massless Dirac equation, we derive a general condition for the cloaking of a scatterer by a potential with radial symmetry. We also perform tight-binding calculations to show that our findings are robust against the presence of disorder in the gate potential.
