Dielectric resonators are key components for many microwave and millimetre wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric material.
The commonly used material for building the best cryogenic microwave oscillators is sapphire. However sapphire is becoming a limiting factor for higher frequencies design. It is then important to find new candidates that can fulfil the requirements for millimetre wave low noise oscillators at room and cryogenic temperatures. These clocks are used as a reference in many fields, like modern telecommunication systems, radio astronomy (VLBI), and precision measurements at the quantum limit. High-resolution measurements were made of the temperature-dependence of the electromagnetic properties of a polycrystalline diamond disk at temperatures between 35 K and 330 K at microwave to sub-millimetre wave frequencies. The cryogenic measurements were made using a TE01{delta} dielectric mode resonator placed inside a vacuum chamber connected to a single-stage pulse-tube cryocooler. The high frequency characterization was performed at room temperature using a combination of a quasi-optical two-lens transmission setup, a Fabry-Perot cavity and a whispering gallery mode resonator excited with waveguides. Our CVD diamond sample exhibits a decreasing loss tangent with increasing frequencies. We compare the results with well known crystals. This comparison makes clear that polycrystalline diamond could be an important material to generate stable frequencies at millimetre waves.
We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light
of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.
