The spectral response of quantum well solar cells (QWSCs) is well understood. We describe work on QWSC dark current theory which combined with SR theory yields a system efficiency. A methodology published for single quantum well (SQW) systems is exte
nded to MQW systems in the Al(x) Ga(1-x) As and InGa(0.53x) As(x) P systems. The materials considered are dominated by Shockley-Read-Hall (SRH) recombination. The SRH formalism expresses the dark current in terms of carrier recombination through mid-gap traps. The SRH recombination rate depends on the electron and hole densities of states (DOS) in the barriers and wells, which are well known, and of carrier non-radiative lifetimes. These material quality dependent lifetimes are extracted from analysis of suitable bulk control samples. Consistency over a range of AlGaAs controls and QWSCs is examined, and the model is applied to QWSCs in InGaAsP on InP substrates. We find that the dark currents of MQW systems require a reduction of the quasi Fermi level separation between carrier populations in the wells relative to barrier material, in line with previous studies. Consequences for QWSCs are considered suggesting a high efficiency potential.
The quantum well solar cell (QWSC) has been proposed as a route to higher efficiency than that attainable by homojunction devices. Previous studies have established that carriers escape the quantum wells with high efficiency in forward bias and contr
ibute to the photocurrent. Progress in resolving the efficiency limits of these cells has been dogged by the lack of a theoretical model reproducing both the enhanced carrier gen- eration and enhanced recombination due to the quantum wells. Here we present a model which calculates the incremental generation and recombination due to the QWs and is verified by modelling the experimental light and dark current-voltage characteristics of a range of III-V quantum well structures. We find that predicted dark currents are significantly greater than experiment if we use lifetimes derived from homostructure devices. Successful simulation of light and dark currents can be obtained only by introducing a parameter which represents a reduction in the quasi-Fermi level separation.
