Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$

Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the activation energy. Further, we observe a crossover from a negative magnetoresistance (MR) at high temperatures to positive MR at low temperatures. The crossover temperature was around $sim$80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is qualitatively associated with a change in the conduction mechanism from Mott to Coulomb gap mediated variable range hopping (VRH). This explains the origin of robust insulating ground state of SIO in electrical transport studies and highlights the importance of disorder and Coulombic interaction on electrical properties of SIO.

Unusual size effects on thermoelectricity in a strongly correlated oxide

We investigated size effects on thermoelectricity in thin films of a strongly correlated layered cobaltate. At room temperature, the thermopower is independent of thickness down to 6 nm. This unusual behavior is inconsistent with the Fuchs-Sondheimer theory, which is used to describe conventional metals and semiconductors, and is attributed to the strong electron correlations in this material. Although the resistivity increases, as expected, below a critical thickness of $sim$ 30 nm. The temperature dependent thermopower is similar for different thicknesses but resistivity shows systematic changes with thickness. Our experiments highlight the differences in thermoelectric behavior of strongly correlated and uncorrelated systems when subjected to finite size effects. We use the atomic limit Hubbard model at the high temperature limit to explain our observations. These findings provide new insights on decoupling electrical conductivity and thermopower in correlated systems.

Understanding the nature of electronic effective mass in double-doped SrTiO$_{3}$

We present an approach to tune the effective mass in an oxide semiconductor by a double doping mechanism. We demonstrate this in a model oxide system Sr$_{1-x}$La$_x$TiO$_{3-delta}$, where we can tune the effective mass ranging from 6--20$mathrm{m_e}$ as a function of filling or carrier concentration and the scattering mechanism, which are dependent on the chosen lanthanum and oxygen vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr$_{1-x}$La$_x$TiO$_{3-delta}$. Our method, which shows that the effective mass decreases with carrier concentration, provides a means for understanding the nature of transport processes in oxides, which typically have large effective mass and low electron mobility, contrary to the tradional high mobility semiconductors.