Time-resolved terahertz dynamics in thin films of the topological insulator Bi$_{2}$Se$_3$

We use optical pump--THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi$_2$Se$_3$ films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. These different dynamics are attributed to the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.

Measurement of Two Low-Temperature Energy Gaps in the Electronic Structure of Antiferromagnetic USb2 Using Ultrafast Optical Spectroscopy

Ultrafast optical spectroscopy is used to study the antiferromagnetic f-electron system USb2. We observe the opening of two charge gaps at low temperatures (<45 K), arising from renormalization of the electronic structure. Analysis of our data indicates that one gap is due to hybridization between localized f-electron and conduction electron bands, while band renormalization involving magnons leads to the emergence of the second gap. These experiments thus enable us to shed light on the complex electronic structure emerging at the Fermi surface in f-electron systems.

Mechanical and Electronic Properties of Ferromagnetic GaMnAs Using Ultrafast Coherent Acoustic Phonons

Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant C11 of Ga1-xMnxAs (0.03<x<0.07) are observed to be systematically smaller than those of GaAs. Both C11 and Vs of GaMnAs are found to increase with temperature (78 K<T<295 K), again in contrast to the opposite behavior in GaAs. In addition, the fundamental bandgap (at E0 critical point) of Ga1-xMnxAs is found to shift slightly to higher energies with Mn concentration.

Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

Ultrafast time-resolved differential reflectivity of Bi2Se3 crystals is studied using optical pump-probe spectroscopy. Three distinct relaxation processes are found to contribute to the initial transient reflectivity changes. The deduced relaxation timescale and the sign of the reflectivity change suggest that electron-phonon interactions and defect-induced charge trapping are the underlying mechanisms for the three processes. After the crystal is exposed to air, the relative strength of these processes is altered and becomes strongly dependent on the excitation photon energy.

Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation

We use femtosecond optical pulses to induce, control and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ~40 K we observe coherent oscillations of the local Mn spins, triggered by an ultrafast photoinduced reorientation of the in-plane easy axis. The amplitude saturation of the oscillations above a certain pump intensity indicates that the easy axis remains unchanged above ~TC/2. We find that the observed magnetization precession damping (Gilbert damping) is strongly dependent on pump laser intensity, but largely independent on ambient temperature. We provide a physical interpretation of the observed light-induced collective Mn-spin relaxation and precession.