Using first-principles electronic structure calculations, we have studied the dependence of the Curie temperature on external hydrostatic pressure for random Ni2MnSn Heusler alloys doped with Cu and Pd atoms, over the entire range of dopant concentra
tions. The Curie temperatures are calculated by applying random-phase approximation to the Heisenberg Hamiltonian whose parameters are determined using the linear response and multiple scattering methods, based on density-functional theory. In (Ni1-x,Pdx)2MnSn alloys, the Curie temperature is found to increase with applied pressure over the whole concentration range. The crossover from the increase to the decrease of the Curie temperature with pressure takes place for Cu concentrations larger than about 70% in (Ni1-x,Cux)2MnSn Heusler alloys. The results for the reference Ni2MnSn Heusler alloy agree well with a previous theoretical study of E. Sasioglu, L. M. Sandratskii and P. Bruno Phys. Rev. B 71 214412 (2005) and also reasonably well with available experimental data. Results for the spin-disorder-induced part of the resistivity in (Ni1-x,Pdx)2MnSn Heusler alloys, calculated by using the disordered local moment model, are also presented. Finally, a qualitative understanding of the results, based on Andersons superexchange interaction and Stearns model of the indirect exchange interaction between localized and itinerant d electrons, is provided.
The electronic properties, exchange interactions, finite-temperature magnetism, and transport properties of random quaternary Heusler Ni$_{2}$MnSn alloys doped with Cu- and Pd-atoms are studied theoretically by means of {it ab initio} calculations ov
er the entire range of dopant concentrations. While the magnetic moments are only weakly dependent on the alloy composition, the Curie temperatures exhibit strongly non-linear behavior with respect to Cu-doping in contrast with an almost linear concentration dependence in the case of Pd-doping. The present parameter-free theory agrees qualitatively and also reasonably well quantitatively with the available experimental results. An analysis of exchange interactions is provided for a deeper understanding of the problem. The dopant atoms perturb electronic structure close to the Fermi energy only weakly and the residual resistivity thus obeys a simple Nordheim rule. The dominating contribution to the temperature-dependent resistivity is due to thermodynamical fluctuations originating from the spin-disorder, which, according to our calculations, can be described successfully via the disordered local moments model. Results based on this model agree fairly well with the measured values of spin-disorder induced resistivity.
We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of s
tates near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.
