Photoluminescence and High Temperature Persistent Photoconductivity Experiments in SnO2 Nanobelts

The Persistent Photoconductivity (PPC) effect was studied in individual tin oxide (SnO2) nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low temperature Photoluminescence measurements were carried out to study the optical transitions and to determine of the acceptor/donors levels and their best representation inside the band gap. Under ultraviolet (UV) illumination and at temperatures in the range of 200 to 400K we observed a fast and strong enhancement of the photoconductivity, and the maximum value of the photocurrent induced increases as the temperature or the oxygen concentration decreases. By turning off the UV illumination the induced photocurrent decays with lifetimes up to several hours. The photoconductivity and the PPC results were explained by adsorption and desorption of molecular oxygen at the surface of the SnO2 nanobelts. Based on the temperature dependence of the PPC decay an activation energy of 230 meV was found, which corresponds to the energy necessary for thermal ionization of free holes from acceptor levels to the valence band, in agreement with the photoluminescence results presented. The molecular-oxygen recombination with holes is the origin of the PPC effect in metal oxide semiconductors, so that, the PPC effect is not related to the oxygen vacancies, as commonly presented in the literature.

3D Hopping Conduction in SnO2 nanobelts

The temperature dependence of the electrical transport of a individual tin oxide nanobelt was measured, in darkness, from 400 to 5K. We found four intrinsic electrical transport mechanisms through the nanobelt. It starts with Thermal-Activation Conduction between 400 and 314K, Nearest-Neighbor Hopping conduction between 268 and 115K, and Variable Range Hopping conduction below 58K, with a crossover from the 3D-Mott to the 3D-Efros-Shklovskii regime at 16K. We claim that this sequence reveal the three-dimensional nature of the electrical transport in the SnO2 nanobelts, even they are expected to behave as one-dimensional systems.

Quantized conductance in SnO2 nanobelts with rectangular hard-walls

Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage characteristics, and were analyzed considering the nanobelt as a quantum wire with rectangular cross-section hard-walls. The quantum confinement in the nanowires created conditions for the successive filling of the electron energy-subbands, as the gate voltage increases. When the source-drain voltage is changed the oscillations are not dislocated with respect to Vg, indicating flat-band subband energies at low temperatures. The subband separation was found to be in good agreement with the experimental observations, since the oscillations tend to disappear for T > 60K. Therefore, a novel quantum effect is reported in SnO2 nanobelts, which is expected to behave as bulk at zero electric gate fields.

Nearly Kahler homogeneous manifolds with positive curvature

We prove that a 2n-dimensional compact homogeneous nearly Kahler manifold with strictly positive sectional curvature is isometric to CP^{n}, equipped with the symmetric Fubini-Study metric or with the standard Sp(m)-homogeneous metric, n =2m-1, or to S^{6} as Riemannian manifold with constant sectional curvature. This is a positive answer for a revised version of a conjecture given by Gray.

Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.

On-chip Integration of High-Frequency Electron Paramagnetic Resonance Spectroscopy and Hall-Effect Magnetometry

A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated from a two dimensional electron gas GaAs/AlGaAs heterostructure in the form of a cross, with a 50x50 um2 sensing area. A high-frequency microstrip resonator is coupled with two small gaps to a transmission line with a 50 Ohms impedance. Different resonator lengths are used to obtain quasi-TEM fundamental resonant modes in the frequency range 10-30 GHz. The resonator is positioned on top of the active area of the Hall-effect magnetometer, where the magnetic field of the fundamental mode is largest, thus optimizing the conversion of microwave power into magnetic field at the sample position. The two gaps coupling the resonator and transmission lines are engineered differently. The gap to the microwave source is designed to optimize the loaded quality factor of the resonator (Q = 150) while the gap for the transmitted signal is larger. This latter gap minimizes losses and prevents distortion of the resonance while enabling measurement of the transmitted signal. The large filling factor of the resonator permits sensitivities comparable to that of high-quality factor resonant cavities. The integrated sensor enables measurement of the magnetization response of micron scale samples upon application of microwave fields. In particular, the combined measurement of the magnetization change and the microwave power under cw microwave irradiation of single crystal of molecular magnets is used to determine of the energy relaxation time of the molecular spin states. In addition, real time measurements of the magnetization dynamics upon application of fast microwave pulses are demonstrated

Size Effects in the Magnetoresistance of Graphite: Absence of Magnetoresistance in Micrometer size Samples

We present a study of the magnetoresistance of highly oriented pyrolytic graphite (HOPG) as a function of the sample size. Our results show unequivocally that the magnetoresistance reduces with the sample size even for samples of hundreds of micrometers size. This sample size effect is due the large mean free path and Fermi wavelength of carriers in graphite and may explain the observed practically absence of magnetoresistance in micrometer confined small graphene samples where quantum effects should be at hand. These were not taken into account in the literature yet and ask for a revision of experimental and theoretical work on graphite.