Three dimensional (3D) topological Dirac materials are under intensive study recently. The layered compound ZrTe$_5$ has been suggested to be one of them by transport and ARPES experiments. Here, we perform infrared reflectivity measurement to invest
igate the underlying physics of this material. The derived optical conductivity exhibits linear increasing with frequency below normal interband transitions, which provides the first optical spectroscopic proof of a 3D Dirac semimetal. Apart from that, the plasma edge shifts dramatically to lower energy upon temperature cooling, which might be associated with the consequence of lattice parameter shrinking. In addition, an extremely sharp peak shows up in the frequency dependent optical conductivity, indicating the presence of a Van Hove singularity in the joint density of state.
Topological superconductivity, implying gapless protected surface states, has recently been proposed to exist in the compound CuxBi2Se3. Unfortunately, low diamagnetic shielding fractions and considerable inhomogeneity have been reported in this comp
ound. In an attempt to understand and improve on the finite superconducting volume fractions, we have investigated the effects of various growth and post-annealing conditions. With a melt-growth (MG) method, diamagnetic shielding fractions of up to 56% in Cu0.3Bi2Se3 have been obtained, the highest value reported for this method. We investigate the efficacy of various quenching and annealing conditions, finding that quenching from temperatures above 560C is essential for superconductivity, whereas quenching from lower temperatures or not quenching at all is detrimental. A modified floating zone (FZ) method yielded large single crystals but little superconductivity. Even after annealing and quenching, FZ-grown samples had much less chance of being superconducting than MG-grown samples. From the low shielding fractions in FZ-grown samples and the quenching dependence, we suggest that a metastable secondary phase having a small volume fraction in most of the samples may be responsible for the superconductivity.
Indium substitution turns the topological crystalline insulator (TCI) Pb$_{0.5}$Sn$_{0.5}$Te into a possible topological superconductor. To investigate the effect of the indium concentration on the crystal structure and superconducting properties of
(Pb$_{0.5}$Sn$_{0.5}$)$_{1-x}$In$_{x}$Te, we have grown high-quality single crystals using a modified floating-zone method, and have performed systematic studies for indium content in the range $0leq xleq 0.35$. We find that the single crystals retain the rock salt structure up to the solubility limit of indium ($xsim0.30$). Experimental dependences of the superconducting transition temperature ($T_c$) and the upper critical magnetic field ($H_{c2}$) on the indium content $x$ have been measured. The maximum $T_c$ is determined to be 4.7 K at $x=0.30$, with $mu_0H_{c2}(T=0)approx 5$ T.
