The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have demonstrated tha
t the relaxation-time approximation can be used to describe the damping effects in weakly interacting multiband systems only if local charge conservation in the system and gauge invariance of the response theory are properly treated. Such a gauge-invariant response theory is illustrated on the common tight-binding model for conduction electrons in hole-doped graphene. The model predicts two distinctly resolved maxima in the energy-loss-function spectra. The first one corresponds to the intraband plasmons (usually called the Dirac plasmons). On the other hand, the second maximum ($pi$ plasmon structure) is simply a consequence of the van Hove singularity in the single-electron density of states. The dc resistivity and the real part of the dynamical conductivity are found to be well described by the relaxation-time approximation, but only in the parametric space in which the damping is dominated by the direct scattering processes. The ballistic transport and the damping of Dirac plasmons are thus the questions that require abandoning the relaxation-time approximation.
A systematic method of calculating the dynamical conductivity tensor in a general multiband electronic model with strong boson-mediated electron-electron interactions is described. The theory is based on the exact semiclassical expression for the cou
pling between valence electrons and electromagnetic fields and on the self-consistent Bethe--Salpeter equations for the electron-hole propagators. The general diagrammatic perturbation expressions for the intraband and interband single-particle conductivity are determined. The relations between the intraband Bethe--Salpeter equation, the quantum transport equation and the ordinary transport equation are briefly discussed within the memory-function approximation. The effects of the Lorentz dipole-dipole interactions on the dynamical conductivity of low-dimensional $sp_alpha$ models are described in the same approximation. Such formalism proves useful in studies of different (pseudo)gapped states of quasi-one-dimensional systems with the metal-to-insulator phase transitions and can be easily extended to underdoped two-dimensional high-$T_c$ superconductors.
Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing
Sn content. However, doping with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of the upper critical field B_c2, indicating an increased disorder in the system and a reduced scattering length of the conducting holes in CuO2 layers. In spite of the increased scattering rate, the normal state resistivity and the Hall resistivity are reduced with respect to the pure compound, due to the increased number of itinerant holes in CuO2 layers, which represent the main conductivity channel. Most of the electrons in RuO2 layers are presumably localized, but the observed negative magnetoresistance and the extraordinary Hall effect lead to the conclusion that there exists a small number of itinerant electrons in RuO$_2$ layers that exhibit colossal magnetoresistance.
