The cluster $^4rm He+Lambda+rm n$ model is applied to describe the $^6_Lambda$He hypernucleus. The consideration is based on the configuration space Faddeev equations for a system of non-identical particles. A set of the pair potentials includes the
OBE simulating (NSC97f) model for the $Lambda rm n$ interaction and the phenomenological potentials for the $alphaLambda$ and $alpha rm n$ interactions. We calculated energies of spin (1$^-$,2$^-$) doublet. For the 2$^-$ excitation energy, the obtained value is 0.18 MeV. The hyperon binding energy of the bound 1$^-$ state is less than the experimental value, which may be an evidence for violation of the exact three-body cluster structure.
Two dimensional InAs/GaAs quantum ring (QR) is considered using the effective potential approach. The symmetry of QR shape is violated as it is in the well-known Bohigas annular billiard. We calculate energy spectrum and studied the spatial localizat
ion of a single electron in such QR. For weak violation of the QR shape symmetry, the spectrum is presented as a set of quasi-doublets. Tunneling between quasi-doublet states is studied by the dependence on energy of the states. The dependence is changed with variation of the QR geometry that is related to the eccentricity of the QR. An interpretation of the experimental result obtained in [1] is proposed. We show that the chaos-assisted tunneling effect found in this paper can be explained by inter-band interactions occurred by anti-crossing of the levels with different radial quantum numbers.
We investigate the electron localization in double concentric quantum rings (DCQRs) when a perpendicular magnetic field is applied. In weakly coupled DCQRs, the situation can occur when the single electron energy levels associated with different ring
s may be crossed. To avoid degeneracy, the anti-crossing of these levels has a place. We show that in this DCQR the electron spatial transition between the rings occurs due to the electron level anti-crossing. The anti-crossing of the levels with different radial quantum numbers provides the conditions for electron tunneling between rings. To study electronic structure of the semiconductor DCQR, the single sub-band effective mass approach with energy dependence was used. Results of numerical simulation for the electron transition are presented for DCQRs of geometry related to one fabricated in experiment.
