High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating
domain walls in ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls can be visualized based on photo-induced charging effects and local variations in their electronic conductance can be mapped by analyzing the energy distribution of photoelectrons. Our results open the door for non-destructive, contract-free, and element-specific studies of the electronic and chemical structure at domain walls in ferroelectrics.
A general symmetry analysis of the optical conductivity or scattering tensor is used to rewrite the conductivity tensor as a sum of fundamental spectra multiplied by simple functions depending on the local magnetization direction. Using this formalis
m, we present several numerical examples at the transition metal L23 edge. From these numerical calculations we can conclude that large deviations from the magneto-optical effects in spherical symmetry are found. These findings are in particular important for resonant x-ray diffraction experiments where the polarization dependence and azimuthal dependence of the scattered Bragg intensity is used to determine the local ordered magnetization direction.
We present a laterally resolved X-ray magnetic dichroism study of the magnetic proximity effect in a highly ordered oxide system, i.e. NiO films on Fe3O4(110). We found that the magnetic interface shows an ultrasharp electronic, magnetic and structur
al transition from the ferrimagnet to the antiferromagnet. The monolayer which forms the interface reconstructs to NiFe2O4 and exhibits an enhanced Fe and Ni orbital moment, possibly caused by bonding anisotropy or electronic interaction between Fe and Ni cations. The absence of spin-flop coupling for this crystallographic orientation can be explained by a structurally uncompensated interface and additional magnetoelastic effects.
