The two-dimensional (2D) layered semiconductors such as MoS2 have attracted tremendous interest as a new class of electronic materials. However, there is considerable challenge in making reliable contacts to these atomically thin materials. Here we p
resent a new strategy by using graphene as back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily modified by gate potential to ensure a nearly perfect band alignment with MoS2. We demonstrate, for the first time, a transparent contact can be made to MoS2 with essentially zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barrier and only seen in four-terminal devices in conventional metal-contacted MoS2 system. With further passivation y born nitride encapsulation, we demonstrate a record high extrinsic (two-terminal) field effect mobility over 1300 cm2/Vs in MoS2.
