Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects
that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA relies on electronic inversion symmetry breaking which typically stems from intrinsic spin-orbit coupling - a relativistic effect - in a non-centrosymmetric environment. Here, to overcome this limitation, we artificially break inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ TI nanowires, in which we observe the largest ever reported size of MCA rectification effect in a normal conductor - over 10000 times greater than in a typical material with a large MCA - and its behaviour is consistent with theory. Our findings present new opportunities for future technological applications of topological devices.
We analyze Andreev bound states (ABSs) that form in normal sections of a Rashba nanowire that is only partially covered by a superconducting layer. These ABSs are localized close to the ends of the superconducting section and can be pinned to zero en
ergy over a wide range of magnetic field strengths even if the nanowire is in the non-topological regime. For finite-size nanowires (typically $lesssim 1$ $mu$m in current experiments), the ABS localization length is comparable to the length of the nanowire. The probability density of an ABS is therefore non-zero throughout the nanowire and differential-conductance calculations reveal a correlated zero-bias peak (ZBP) at both ends of the nanowire. When a second normal section hosts an additional ABS at the opposite end of the superconducting section, the combination of the two ABSs can mimic the closing and reopening of the bulk gap in local and non-local conductances accompanied by the appearance of the ZBP. These signatures are reminiscent of those expected for Majorana bound states (MBSs) but occur here in the non-topological regime. Our results demonstrate that conductance measurements of correlated ZBPs at the ends of a typical superconducting nanowire or an apparent closing and reopening of the bulk gap in the local and non-local conductance are not conclusive indicators for the presence of MBSs.
We consider a three-dimensional topological insulator (TI) wire with a non-uniform chemical potential induced by gating across the cross-section. This inhomogeneity in chemical potential lifts the degeneracy between two one-dimensional surface state
subbands. A magnetic field applied along the wire, due to orbital effects, breaks time-reversal symmetry and lifts the Kramers degeneracy at zero-momentum. If placed in proximity to an $s$-wave superconductor, the system can be brought into a topological phase at relatively weak magnetic fields. Majorana bound states (MBSs), localized at the ends of the TI wire, emerge and are present for an exceptionally large region of parameter space in realistic systems. Unlike in previous proposals, these MBSs occur without the requirement of a vortex in the superconducting pairing potential, which represents a significant simplification for experiments. Our results open a pathway to the realisation of MBSs in present day TI wire devices.
Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic c
orrections and are always found to be very small. A large magnetochiral anisotropy of novel origin has been proposed for topological semimetals, but no concrete example has been known so far. Here we report our discovery that ZrTe5 crystals in proximity to a topological quantum phase transition present gigantic magnetochiral anisotropy which is at least 1000 times larger than in any known material. We argue that a very low carrier density, inhomogeneities, and a torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are central to explain this extraordinary property.
In frustrated quantum magnetism, chiral spin liquids are a particularly intriguing subset of quantum spin liquids in which the fractionalized parton degrees of freedom form a Chern insulator. Here we study an exactly solvable spin-3/2 model which har
bors not only chiral spin liquids but also spin liquids with higher-order parton band topology -- a trivial band insulator, a Chern insulator with gapless chiral edge modes, and a second-order topological insulator with gapless corner modes. With a focus on the thermodynamic precursors and thermal phase transitions associated with these distinct states, we employ numerically exact quantum Monte Carlo simulations to reveal a number of unconventional phenomena. This includes a heightened thermal stability of the ground state phases, the emergence of a partial flux ordering of the associated $mathbb{Z}_2$ lattice gauge field, and the formation of a thermal Majorana metal regime extending over a broad temperature range.
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confineme
nt, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.
A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tun
ing the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.
