The emergence of a topologically nontrivial vortex-like magnetic structure, the magnetic skyrmion, has launched new concepts for memory devices. There, extensive studies have theoretically demonstrated the ability to encode information bits by using
a chain of skyrmions in one-dimensional nanostripes. Here, we report the first experimental observation of the skyrmion chain in FeGe nanostripes by using high resolution Lorentz transmission electron microscopy. Under an applied field normal to the nanostripes plane, we observe that the helical ground states with distorted edge spins would evolves into individual skyrmions, which assemble in the form of chain at low field and move collectively into the center of nanostripes at elevated field. Such skyrmion chain survives even as the width of nanostripe is much larger than the single skyrmion size. These discovery demonstrates new way of skyrmion formation through the edge effect, and might, in the long term, shed light on the applications.
Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future ultra-dense memory and logic devices1-4. To enable such applications, particular attention has been focused on the sk
yrmions properties in highly confined geometry such as one dimensional nanowires5-8. Hitherto it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here we report the experimental demonstration of such scheme, where magnetic field-driven skyrmion cluster (SC) states with small numbers of skyrmions were demonstrated to exist on the cross-sections of ultra-narrow single-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmion lattice constant (18 nm). In contrast to the skyrmion lattice in bulk MnSi samples, the skyrmion clusters lead to anomalous magnetoresistance (MR) behavior measured under magnetic field parallel to the NW long axis, where quantized jumps in MR are observed and directly associated with the change of the skyrmion number in the cluster, which is supported by Monte Carlo simulations. These jumps show the key difference between the clustering and crystalline states of skyrmions, and lay a solid foundation to realize skyrmion-based memory devices that the number of skyrmions can be counted via conventional electrical measurements.
