The definition of accessible coherence is proposed. Through local measurement on the other subsystem and one way classical communication, a subsystem can access more coherence than the coherence of its density matrix. Based on the local accessible co
herence, the part that can not be locally accessed is also studied, which we call it remaining coherence. We study how the bipartite coherence is distributed by partition for both l1 norm coherence and relative entropy coherence, and the expressions for local accessible coherence and remaining coherence are derived. we also study some examples to illustrate the distribution.
We study the geometric measure of quantum coherence recently proposed in [Phys. Rev. Lett. 115, 020403 (2015)]. Both lower and upper bounds of this measure are provided. These bounds are shown to be tight for a class of important coherent states -- m
aximally coherent mixed states. The trade-off relation between quantum coherence and mixedness for this measure is also discussed.
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional dilut
ed magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.
The search of large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulat
ors with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Gamma point, similar to the case of HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.
The quantum anomalous Hall (QAH) state is a two-dimensional bulk insulator with a non-zero Chern number in absence of external magnetic fields. Protected gapless chiral edge states enable dissipationless current transport in electronic devices. Dopin
g topological insulators with random magnetic impurities could realize the QAH state, but magnetic order is difficult to establish experimentally in the bulk insulating limit. Here we predict that the single quintuple layer of GdBiTe3 film could be a stoichiometric QAH insulator based on ab-initio calculations, which explicitly demonstrate ferromagnetic order and chiral edge states inside the bulk gap. We further investigate the topological quantum phase transition by tuning the lattice constant and interactions. A simple low-energy effective model is presented to capture the salient physical feature of this topological material.
The Fermi surfaces (FS) of LaOFeAs (in $k_z$=0 plane) consist of two hole-type circles around $Gamma$ point, which do not touch each other, and two electron-type co-centered ellipses around M point, which are degenerate along the M-X line. By first-p
rinciples calculations, here we show that additional degeneracy exists for the two electron-type FS, and the crucial role of F-doping and pressure is to enhance this orbital degeneracy. It is suggested that the inter-orbital fluctuation is the key point to understand the unconventional superconductivity in these materials.
