Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimenta
lly a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-field measurements of the Anderson-localized modes. This is achieved by comparing the spectral range that Anderson localization is observed to numerical simulations and the method offers sensitivity down to ~ 1 nm.
