ترغب بنشر مسار تعليمي؟ اضغط هنا

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices.
Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {bf k}-split pairs of states above the topological surface state. The {bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering channels opened by electron doping. A detailed analysis of the scattering rates suggests that intra-band scattering dominates with the largest effect coming from warping of the Fermi surface.
We have performed photoemission studies of the electronic structure in LiC$_6$ and KC$_8$, a non-superconducting and a superconducting graphite intercalation compound, respectively. We have found that the charge transfer from the intercalant layers t o graphene layers is larger in KC$_8$ than in LiC$_6$, opposite of what might be expected from their chemical composition. We have also measured the strength of the electron-phonon interaction on the graphene-derived Fermi surface to carbon derived phonons in both materials and found that it follows a universal trend where the coupling strength and superconductivity monotonically increase with the filling of graphene $pi^{ast}$ states. This correlation suggests that both graphene-derived electrons and graphene-derived phonons are crucial for superconductivity in graphite intercalation compounds.
49 - M. H. Pan , X. B. He , G. R. Li 2008
The discovery of superconductivity with a critical temperature exceeding 55 K in the iron-oxypnictides and related compounds has quite suddenly given the community a new set of materials - breaking the tyranny of copper. This new class of materials r aises fundamental questions related to the origin of the electron pairing in the superconducting state and to the similarity to superconductivity in the cuprates. Here, we report spatially resolved measurements using scanning tunneling microscopy/spectroscopy (STM/STS) of the newly discovered iron-based layered superconductor NdFeAsO0.86F0.14 (Tc = 48 K) as a function of temperature. The tunneling spectra at 17 K show a suppression of spectral intensity within +/- 10 meV, indicative of the opening of the superconducting gap (SG). Below Tc, the sample exhibits two characteristic gaps - a large one (18 meV) and a small one (9 meV) - existing in different spatial locations. Both gaps are closed above Tc at the bulk Tc, but only the small gap can be fitted with a superconducting gap function. This gap displays a BCS - like order parameter. Above Tc, at the same location where the small gap was observed, a pseudogap (PG) opens abruptly at a temperature just above Tc and closes at 120 K. In contrast to the cuprates, the SG and PG have competing order parameters.
Electrons in a simple correlated system behave either as itinerant charge carriers or as localized moments. However, there is growing evidence for the coexistence of itinerant electrons and local moments in transition metals with nearly degenerate $d $-orbitals. It demands one or more selective electron orbitals undergo the Mott transition while the others remain itinerant. Here we report the first observation of such an orbital selective Mott transition (OSMT) in Ca$_{1.8}$Sr$_{0.2}$RuO$_4$ by angle-resolved photoemission spectroscopy (ARPES). While we observed two sets of dispersing bands and Fermi surface associated with the doubly-degenerate $d_{yz}$ and $d_{zx}$ orbitals, the Fermi surface associated with the wider $d_{xy}$ band is missing, a consequence of selective Mott localization. Our theoretical calculations demonstrate that this novel OSMT is mainly driven by the combined effects of interorbital carrier transfer, superlattice potential, and orbital degeneracy, whereas the bandwidth difference plays a less important role.
The superconducting phase of the high-Tc cuprates has been thought to be described by a single d-wave pairing order parameter. Recently, there has been growing evidence suggesting that another form of order, possibly inherited from the pseudogap phas e above Tc, may coexist with superconductivity in the underdoped regime. Through a combined study of scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we report the observation of two distinct gaps (a small-gap and a large-gap) that coexist both in real space and in the anti-nodal region of momentum space in the superconducting phase of Bi2Sr2-xLaxCuO6+delta. We show that the small-gap is associated with superconductivity. The large-gap persists to temperatures above the transition temperature Tc and is found to be linked to short-range charge ordering. Remarkably, we find a strong, short-ranged correlation between the local small- and large- gap magnitudes suggesting that the superconductivity and charge ordering are affected by similar physical processes.
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا