We have investigated thermal conductivity of graphene laminate films deposited on polyethylene terephthalate substrates. Two types of graphene laminate were studied - as deposited and compressed - in order to determine the physical parameters affecti
ng the heat conduction the most. The measurements were performed using the optothermal Raman technique and a set of suspended samples with the graphene laminate thickness from 9 to 44 micrometers. The thermal conductivity of graphene laminate was found to be in the range from 40 W/mK to 90 W/mK at room temperature. It was found unexpectedly that the average size and the alignment of graphene flakes are more important parameters defining the heat conduction than the mass density of the graphene laminate. The thermal conductivity scales up linearly with the average graphene flake size in both uncompressed and compressed laminates. The compressed laminates have higher thermal conductivity for the same average flake size owing to better flake alignment. The possibility of up to 600X enhancement of the thermal conductivity of plastic materials by coating them with the thin graphene laminate films has important practical implications.
We study atom scattering from two colliding Bose-Einstein condensates using a position sensitive, time resolved, single atom detector. In analogy to quantum optics, the process can also be thought of as spontaneous, degenerate four wave mixing of de
Broglie waves. We find a clear correlation between atoms with opposite momenta, demonstrating pair production in the scattering process. We also observe a Hanbury Brown and Twiss correlation for collinear momenta, which permits an independent measurement of the size of the pair production source and thus the size of the spatial mode. The back to back pairs occupy very nearly two oppositely directed spatial modes, a promising feature for future quantum optics experiments.
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} geq 50$ nm exhibited typical unipolar resistance memory switching, wh
ile those with $t_{BE} leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.
This paper presents one MEMS design tool with total six design flows, which makes it possible that the MEMS designers are able to choose the most suitable design flow for their specific devices. The design tool is divided into three levels and interc
onnected by six interfaces. The three levels are lumped-element model based system level, finite element analysis based device level and process level, which covers nearly all modeling and simulation functions for MEMS design. The six interfaces are proposed to automatically transmit the design data between every two levels, thus the maximal six design flows could be realized. The interfaces take the netlist, solid model and layout as the data inlet and outlet for the system, device and process level respectively. The realization of these interfaces are presented and verified by design examples, which also proves that the enough flexibility in the design flow can really increase the design efficiency.
Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can b
e identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation.
