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Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental research an d industrial production. However, it is generally accepted that the orbital of materials are impossible to be altered once they have been made. Here we use electric-field to dynamically tune the electronic phase transition in (La,Sr)MnO3 films with different Mn^4+/(Mn^3+ + Mn^4+) ratios. The orbital occupancy and corresponding magnetic anisotropy of these thin films are manipulated by gate voltage in a reversible and quantitative manner. Positive gate voltage increases the proportion of occupancy of the orbital and magnetic anisotropy that were initially favored by strain (irrespective of tensile and compressive), while negative gate voltage reduces the concomitant preferential orbital occupancy and magnetic anisotropy. Besides its fundamental significance in orbital physics, our findings might advance the process towards practical oxide-electronics based on orbital.
Films of oxides doped with transition metals are frequently believed to have magnetic inclusions. Magnetic methods to determine the amount of nanophases and their magnetic characteristics are described. The amount of the sample that is paramagnetic m ay also be measured. Optical methods are described and shown to be very powerful to determine which defects are also magnetic.
Landau theory is used to investigate the behaviour of a metallic magnet driven towards a quantum critical point by the application of pressure. The observed dependence of the transition temperature with pressure is used to show that the coupling of t he magnetic order to the lattice diverges as the quantum critical point is approached. This means that a first order transition will occur in magnets (both ferromagnets and antiferromagnets) because of the coupling to the lattice. The Landau equations are solved numerically without further approximations. There are other mechanisms that can cause a first order transition so the significance of this work is that it will enable us to determine the extent to which any particular first order transition is driven by coupling to the lattice or if other causes are responsible.
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