The calorimeter, range detector and active target elements of the T2K near detectors rely on the Hamamatsu Photonics Multi-Pixel Photon Counters (MPPCs) to detect scintillation light produced by charged particles. Detailed measurements of the MPPC ga
in, afterpulsing, crosstalk, dark noise, and photon detection efficiency for low light levels are reported. In order to account for the impact of the MPPC behavior on T2K physics observables, a simulation program has been developed based on these measurements. The simulation is used to predict the energy resolution of the detector.
For the first time secondary scintillation, generated within the holes of a thick gas electron multiplier (TGEM) immersed in liquid argon, has been observed and measured using a silicon photomultiplier device (SiPM). 250 electron-ion pairs, generated
in liquid argon via the interaction of a 5.9KeV Fe-55 gamma source, were drifted under the influence of a 2.5KV/cm field towards a 1.5mm thickness TGEM, the local field sufficiently high to generate secondary scintillation light within the liquid as the charge traversed the central region of the TGEM hole. The resulting VUV light was incident on an immersed SiPM device coated in the waveshifter tetraphenyl butadiene (TPB), the emission spectrum peaked at 460nm in the high quantum efficiency region of the device. For a SiPM over-voltage of 1V, a TGEM voltage of 9.91KV, and a drift field of 2.5KV/cm, a total of 62 photoelectrons were produced at the SiPM device per Fe-55 event, corresponding to an estimated gain of 150 photoelectrons per drifted electron.
The performance of a silicon photomultiplier has been assessed at low temperature in order to evaluate its suitability as a scintillation readout device in liquid argon particle physics detectors. The gain, measured as 2.1E6 for a constant over-volta
ge of 4V was measured between 25degC and -196degC and found to be invariant with temperature, the corresponding single photoelectron dark count rate reducing from 1MHz to 40Hz respectively. Following multiple thermal cycles no deterioration in the device performance was observed. The photon detection efficiency (PDE) was assessed as a function of photon wavelength and temperature. For an over-voltage of 4V, the PDE, found again to be invariant with temperature, was measured as 25% for 460nm photons and 11% for 680nm photons. Device saturation due to high photon flux rate, observed both at room temperature and -196degC, was again found to be independent of temperature. Although the output signal remained proportional to the input signal so long as the saturation limit was not exceeded, the photoelectron pulse resolution and decay time increased slightly at -196degC.
