The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orie
ntations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 400 V voltage pulses gave the value of domain wall velocity in the range 30-50 m/s. The same velocity was achieved in magnetic field pulse about 50 Oe.
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field (the direc
tion of wall displacement changes with the polarity of the voltage) and even with respect to the magnetization in domains. The inhomogeneous magnetoelectric interaction as a possible mechanism of the effect is proposed.
