Electronic and transport properties of CuGaTe$_2$, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant
relaxation time approximation. The electronic bandstructures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23 eV is in agreement with the experimental value of 1.2 eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe$_2$ are derived, and a figure of merit of $zT= 1.69$ is obtained at 950 K for a hole concentration of $3.7cdot10^{19}$ cm$^{-3}$, in agreement with a recent experimental finding of $zT= 1.4$, confirming that CuGaTe$_2$ is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe$_2$ is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS$_2$ (chalcostibite) a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS$_2$ will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS$_2$ compound.
The electronic structure, Fermi surface and elastic properties of the iso-structural and iso-electronic LaSn$_3$ and YSn$_3$ intermetallic compounds are studied under pressure within the framework of density functional theory including spin-orbit cou
pling. The LaSn$_3$ Fermi surface consists of two sheets, of which the second is very complex. Under pressure a third sheet appears around compression $V/V_0=0.94$, while a small topology change in the second sheet is seen at compression $V/V_0=0.90$. This may be in accordance with the anomalous behaviour in the superconducting transition temperature observed in LaSn$_3$, which has been suggested to reflect a Fermi surface topological transition, along with a non-monotonic pressure dependence of the density of states at the Fermi level. The same behavior is not observed in YSn$_3$, the Fermi surface of which already includes three sheets at ambient conditions, and the topology remains unchanged under pressure. The reason for the difference in behaviour between LaSn$_3$ and YSn$_3$ is the role of spin-orbit coupling and the hybridization of La - $4f$ states with the Sn - $p$ states in the vicinity of the Fermi level, which is well explained using the band structure calculation. The elastic constants and related mechanical properties are calculated at ambient as well as at elevated pressures. The elastic constants increase with pressure for both compounds and satisfy the conditions for mechanical stability under pressure.
The structural and elastic properties of orthorhombic black phosphorus have been investigated using first-principles calculations based on density functional theory. The structural parameters have been calculated using the local density approximation
(LDA), the generalized gradient approximation (GGA), and with several dispersion corrections to include van der Waals interactions. It is found that the dispersion corrections improve the lattice parameters over LDA and GGA in comparison with experimental results. The calculations reproduce well the experimental trends under pressure and show that van der Waals interactions are most important for the crystallographic b-axis, in the sense that they have the largest effect on the bonding between the phosphorus layers. The elastic constants are calculated and are found to be in good agreement with experimental values. The calculated C$_{22}$ elastic constant is significantly larger than the C$_{11}$ and C$_{33}$ parameters, implying that black phosphorus is stiffer against strain along the a-axis than along the b- and c-axes. From the calculated elastic constants,the mechanical properties such as bulk modulus, shear modulus, Youngs modulus and Poissons ratio are obtained. The calculated Raman active optical phonon frequencies and their pressure variations are in excellent agreement with available experimental results.
The structural behaviour of CsCdF3 under pressure is investigated by means of theory and experiment. High-pressure powder x-ray diffraction experiments were performed up to a maximum pressure of 60 GPa using synchrotron radiation. The cubic $Pmbar{3}
m$ crystal symmetry persists throughout this pressure range. Theoretical calculations were carried out using the full-potential linear muffin-tin orbital method within the local density approximation and the generalized gradient approximation for exchange and correlation effects. The calculated ground state properties -- the equilibrium lattice constant, bulk modulus and elastic constants -- are in good agreement with experimental results. Under ambient conditions, CsCdF3 is an indirect gap insulator with the gap increasing under pressure.
