The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the cha
rge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $mu$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Syst`eme International dunites (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required ac
curacy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and mag
netic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation, but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the high density of line defects (grain boundaries and wrinkles) that cross the Hall bars, as revealed by structural characterizations. Numerical calculations confirm that quasi-one-dimensional extended non-chiral states can form along such line defects and short-circuit the Hall bar chiral edge states.
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling
bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm^2/Vs to > 11 000 cm^2/Vs at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10^12 cm^-2 to less than 10^12 cm^-2. For a typical large (30x280 um^2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level fillings factors of nu = 2, 6, 10, 14.. 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at nu=2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mOhm, for measurement currents as high as 250 uA. This is very promising in the view of an application in metrology.
We construct examples of smooth 4-dimensional manifolds M supporting a locally CAT(0)-metric, whose universal cover X satisfy Hruskas isolated flats condition, and contain 2-dimensional flats F with the property that the boundary at infinity of F def
ines a nontrivial knot in the boundary at infinity of X. As a consequence, we obtain that the fundamental group of M cannot be isomorphic to the fundamental group of any Riemannian manifold of nonpositive sectional curvature. In particular, M is a locally CAT(0)-manifold which does not support any Riemannian metric of nonpositive sectional curvature.
For a k-flat F inside a locally compact CAT(0)-space X, we identify various conditions that ensure that F bounds a (k+1)-dimensional half flat in X. Our conditions are formulated in terms of the ultralimit of X. As applications, we obtain (1) constra
ints on the behavior of quasi-isometries between tocally compact CAT(0)-spaces, (2) constraints on the possible non-positively curved Riemannian metrics supported by certain manifolds, and (3) a correspondence between metric splittings of a complete, simply connected, non-positively curved Riemannian manifold and the metric splittings of its asymptotic cones. Furthermore, combining our results with the Ballmann, Burns-Spatzier rigidity theorem and the classical Mostow rigidity theorem, we also obtain (4) a new proof of Gromovs rigidity theorem for higher rank locally symmetric spaces.
For a finite volume geodesic polyhedron P in hyperbolic 3-space, with the property that all interior angles between incident faces are integral submultiples of Pi, there is a naturally associated Coxeter group generated by reflections in the faces. F
urthermore, this Coxeter group is a lattice inside the isometry group of hyperbolic 3-space, with fundamental domain the original polyhedron P. In this paper, we provide a procedure for computing the lower algebraic K-theory of the integral group ring of such Coxeter lattices in terms of the geometry of the polyhedron P. As an ingredient in the computation, we explicitly calculate some of the lower K-groups of the dihedral groups and the product of dihedral groups with the cyclic group of order two.
We provide a strengthening of Jordan separation, to the setting of maps from a compact topological space X into a sphere, where the source space X is not necessarily a codimension one sphere, and the map is not necessarily injective.
Given a geodesic inside a simply-connected, complete, non-positively curved Riemannian (NPCR) manifold M, we get an associated geodesic inside the asymptotic cone Cone(M). Under mild hypotheses, we show that if the latter is contained inside a bi-Lip
schitz flat, then the original geodesic supports a non-trivial, orthogonal, parallel Jacobi field. As applications we obtain (1) constraints on the behavior of quasi-isometries between complete, simply connected, NPCR manifolds, and (2) constraints on the NPCR metrics supported by certain manifolds, and (3) a correspondence between metric splittings of complete, simply connected NPCR manifolds, and metric splittings of its asymptotic cones. Furthermore, combining our results with the Ballmann-Burns-Spatzier rigidity theorem and the classic Mostow rigidity, we also obtain (4) a new proof of Gromovs rigidity theorem for higher rank locally symmetric spaces.
For a group G that splits as an amalgamation of A and B over a common subgroup C, there is an associated Waldhausen Nil-group, measuring the failure of Mayer-Vietoris for algebraic K-theory. Assume that (1) the amalgamation is acylindrical, and (2) t
he groups A,B,G satisfy the Farrell-Jones isomorphism conjecture. Then we show that the Waldhausen Nil-group splits as a direct sum of Nil-groups associated to certain (explicitly describable) infinite virtually cyclic subgroups of G. We note that a special case of an acylindrical amalgamation includes any amalgamation over a finite group C.
