Post-spinel transformations and equation of state in ZnGa2O4: Determination at high-pressure by in situ x-ray diffraction

Room temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa2O4 up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa2O4 undergoes a transition from the cubic spinel structure to a tetragonal spinel structure similar to that of ZnMn2O4. At 55 GPa, a second transition to the orthorhombic marokite structure (CaMn2O4-type) takes place. The equation of state of cubic spinel ZnGa2O4 is determined: V0 = 580.1(9) A3, B0 = 233(8) GPa, B0= 8.3(4), and B0= -0.1145 GPa-1 (implied value); showing that ZnGa2O4 is one of the less compressible spinels studied to date. For the tetragonal structure an equation of state is also determined: V0 = 257.8(9) A3, B0 = 257(11) GPa, B0= 7.5(6), and B0= -0.0764 GPa-1 (implied value). The reported structural sequence coincides with that found in NiMn2O4 and MgMn2O4.

High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4

X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4 and CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4 exhibits a defect tetragonal stannite-type structure (I-42m) up to 15.5 GPa and in the range from 15.5 GPa to 18.5 GPa the low-pressure phase coexists with a high-pressure phase, which remains stable up to 23 GPa. In CdGa2S4, we find the defect tetragonal chalcopyrite-type structure (I-4) is stable up to 17 GPa. Beyond this pressure a pressure-induced phase transition takes place. In both materials, the high-pressure phase has been characterized as a defect-cubic NaCl-type structure (Fm-3m). The occurrence of the pressure induced phase transitions is apparently related with an increase of the cation disorder on the semiconductors investigated. In addition, the results allow the evaluation of the axial compressibility and the determination of the equation of state for each compound. The obtained results are compared with those previously reported for isomorphic digallium sellenides. Finally, a systematic study of the pressure-induced phase transition in twenty-three different sphalerite-related ABX2 and AB2X4 compounds indicates that the transition pressure increases as the ratio of the cationic radii and anionic radii of the compounds increases.

High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels

The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the Urbach rule. We have found that, within the pressure-range of stability of the low-pressure spinel phase, the band-gap of CdIn2S4 and MgIn2S4 exhibits a linear blue-shift with pressure, whereas the band-gap of MnIn2S4 exhibits a pronounced non-linear shift. In addition, an abrupt decrease of the band-gap energies occurs in the three compounds at pressures of 10 GPa, 8.5 GPa, and 7.2 GPa, respectively. Beyond these pressures, the optical-absorption edge red-shifts upon compression for the three studied thiospinels. All these results are discussed in terms of the electronic structure of each compound and their reported structural changes.