We systematically measured the DC voltage V_ISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite sp
inel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism or type. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.
