We evaluate the rate of energy loss of a plasmon in a disorder-free carbon nanotube. The plasmon decays into neutral bosonic excitations of the electron liquid. The process is mediated either by phonon-assisted backscattering of a single electron, or
Umklapp backscattering of two electrons. To lowest order in the backscattering interactions the partial decay rates are additive. At zero doping the corresponding decay rates scale as power-laws of the temperature with positive and negative exponents for the two mechanisms, respectively. The precise values of the exponents depend on the Luttinger liquid parameter. At finite doping the decay rates are described by universal crossover functions of frequency and chemical potential measured in units of temperature. In the evaluation of the plasmon decay, we concentrate on a finite-length geometry allowing excitation of plasma resonances.
Spatial separation of electrons and holes in graphene gives rise to existence of plasmon waves confined to the boundary region. Theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths sma
ller than the size of charged domains plasmon dispersion is found to be omega ~ q^(1/4). Frequency, velocity and direction of propagation of guided plasmon modes can be easily controlled by external electric field. In the presence of magnetic field spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that graphene is a promising material for nanoplasmonics.
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper we review o
ur recent results on spin accumulation in ballistic two-dimensional semiconductor heterostructures with Rashba/Dresselhaus spin orbit interactions, and extend the method developed previously to predict the existince of spin-Hall effect on the surface of three-dimensional topological insulators. The major difference of the new Spin-Hall effect is its magnitude, which is predicted to be much stronger than in semiconductor heterostructures. This happens because in semiconductors the spin accumulation appears due to a small spin-orbit interaction, while the spin-orbit constitutes a leading term in the Hamiltonian of topological insulator.
