A detailed study of the exchange bias effect and the interfacial electronic structure in Ni/Co3O4(011) is reported. Large exchange anisotropies are observed at low temperatures, and the exchange bias effect persists to temperatures well above the Nee
l temperature of bulk Co3O4, of about 40 K: to ~80 K for Ni films deposited on well ordered oxide surfaces, and ~150 K for Ni films deposited on rougher Co3O4 surfaces. Photoelectron spectroscopy measurements as a function of Ni thickness show that Co reduction and Ni oxidation occur over an extended interfacial region. We conclude that the exchange bias observed in Ni/Co3O4, and in similar ferromagnetic metallic/Co3O4 systems, is not intrinsic to Co3O4 but rather due to the formation of CoO at the interface.
A detailed spectroscopic and structural characterization of ultrathin cobalt oxide films grown by O-assisted molecular beam epitaxy on a-Al2O3(0001) single crystals is reported. The experimental results show that the cobalt oxide films become progres
sively more disordered with increasing thickness, starting from the early stages of deposition. Low energy electron diffraction patterns suggest that the unit cell remains similar to that of a-Al2O3(0001) up to a thickness of 17 A, while at larger thicknesses a pattern identified with that of Co3O4(111) becomes visible. X-ray photoelectron spectroscopy reveals sudden changes in the shape of the Co 2p lines from 3.4 to 17 A cobalt oxide thickness, indicating the transition from an interfacial cobalt oxide layer towards [111]-oriented Co3O4. In particular, the absence of characteristic satellite peaks in the Co 2p lines indicates the formation of a trivalent, octahedrally coordinated, interfacial cobalt oxide layer during the early stages of growth, identified as the Co2O3 corundum phase.
