ترغب بنشر مسار تعليمي؟ اضغط هنا

104 - Manuela Gerken 2019
Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $mu$m down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV/(AT) $pm$ 0.3 % for gold and 1615 V/(AT) $pm$ 0.5 % for graphene at room temperature. The gold sensors were fabricated on silicon nitride cantilever chips suitable for integration into commercial scanning probe microscopes, allowing scanning Hall microscopy (SHM) under ambient conditions and controlled sensor-sample distance. The height dependent stray field distribution of a magnetic scale was characterized using a 5 $mu$m gold Hall sensor. The uncertainty of the entire Hall sensor based scanning and data acquisition process was analyzed allowing traceably calibrated SHM measurements. The measurement results show good agreement with numerical simulations within the uncertainty budget.
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurem ents reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both {mu}m- and mm scales.
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا