Indium gallium nitride films with nanocolumnar microstructure were deposited with varying indium content and substrate temperatures using plasma-enhanced evaporation on amorphous SiO2 substrates. FESEM and XRD results are presented, showing that more
crystalline nanocolumnar microstructures can be engineered at lower indium compositions. Nanocolumn diameter and packing factor (void fraction) was found to be highly dependent on substrate temperature, with thinner and more closely packed nanocolumns observed at lower substrate temperatures.
This paper presents the preliminary results of optical characterization using spectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thin films with medium indium content (0.38<x<0.68) that were deposited on silicon dioxide using p
lasma-enhanced evaporation. A Kramers-Kronig consistent parametric analytical model using Gaussian oscillators to describe the absorption spectra has been developed to extract the real and imaginary components of the dielectric function ({epsilon}1, {epsilon}2) of InxGa1-xN films. Scanning electron microscope (SEM) images are presented to examine film microstructure and verify film thicknesses determined from ellipsometry modelling. This fitting procedure, model, and parameters can be employed in the future to extract physical parameters from ellipsometric data from other InxGa1-xN films.
