Studies about the constructive aspects of noise and fluctuations in different non-linear systems have shown that the addition of external noise to systems with an intrinsic noise may result in a less noisy response. Recently, the possibility to reduc
e the diffusion noise in semiconductor bulk materials by adding a random fluctuating contribution to the driving static electric field has been tested. The present work extends the previous theories by considering the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples driven by a high-frequency periodic electric field (cyclostationary conditions). By means of Monte Carlo simulations, we calculate the changes in the spectral density of the electron velocity fluctuations caused by the addition of an external correlated noise source. The results reported in this paper confirm that, under specific conditions, the presence of a fluctuating component added to an oscillating electric field can reduce the total noise power. Furthermore, we find a nonlinear behaviour of the spectral density with the noise intensity. Our study reveals that, critically depending on the external noise correlation time, the dynamical response of electrons driven by a periodic electric field receives a benefit by the constructive interplay between the fluctuating field and the intrinsic noise of the system.
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is
adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.
