The study of superconductor-ferromagnet interfaces has generated great interest in the last decades, leading to the observation of spin-aligned triplet supercurrents and 0-pi transitions in Josephson junctions where two superconductors are separated
by an itinerant ferromagnet. Recently, spin-filter Josephson junctions with ferromagnetic barriers have shown unique transport properties, when compared to standard metallic ferromagnetic junctions, due to the intrinsically nondissipative nature of the tunneling process. Here we present the first extensive characterization of spin polarized Josephson junctions down to 0.3 K, and the first evidence of an incomplete 0-pi transition in highly spin polarized tunnel ferromagnetic junctions. Experimental data are consistent with a progressive enhancement of the magnetic activity with the increase of the barrier thickness, as neatly captured by the simplest theoretical approach including a nonuniform exchange field. For very long junctions, unconventional magnetic activity of the barrier points to the presence of spin-triplet correlations.
Superconducting hybrid junctions are revealing a variety of novel effects. Some of them are due to the special layout of these devices, which often use a coplanar configuration with relatively large barrier channels and the possibility of hosting Pea
rl vortices. A Josephson junction with a quasi ideal two-dimensional barrier has been realized by growing graphene on SiC with Al electrodes. Chemical Vapor Deposition offers centimeter size monolayer areas where it is possible to realize a comparative analysis of different devices with nominally the same barrier. In samples with a graphene gap below 400 nm, we have found evidence of Josephson coherence in presence of an incipient Berezinskii-Kosterlitz-Thouless transition. When the magnetic field is cycled, a remarkable hysteretic collapse and revival of the Josephson supercurrent occurs. Similar hysteresis are found in granular systems and are usually justified within the Bean Critical State model (CSM). We show that the CSM, with appropriate account for the low dimensional geometry, can partly explain the odd features measured in these junctions.
Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al junctions
. Graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices, giving also promise of ballistic propagation.
We have identified anomalous behavior of the escape rate out of the zero-voltage state in Josephson junctions with a high critical current density Jc. For this study we have employed YBa2Cu3O7-x grain boundary junctions, which span a wide range of Jc
and have appropriate electrodynamical parameters. Such high Jc junctions, when hysteretic, do not switch from the superconducting to the normal state following the expected stochastic Josephson distribution, despite having standard Josephson properties such as a Fraunhofer magnetic field pattern. The switching current distributions (SCDs) are consistent with nonequilibrium dynamics taking place on a local rather than a global scale. This means that macroscopic quantum phenomena seem to be practically unattainable for high Jc junctions. We argue that SCDs are an accurate means to measure nonequilibrium effects. This transition from global to local dynamics is of relevance for all kinds of weak links, including the emergent family of nanohybrid Josephson junctions. Therefore caution should be applied in the use of such junctions in, for instance, the search for Majorana fermions.
We report on the study of the phase dynamics of high critical temperature superconductor Josephson junctions. We realized YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) grain boundary (GB) biepitaxial junctions in the submicron scale, using low loss substrates, and a
nalyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a model based on two quality factors, which results in a frequency dependent damping. Moreover, our devices can be designed to have Josephson energy of the order of the Coulomb energy. In this unusual energy range, phase delocalization strongly influences the devices dynamics, promoting the transition to a quantum phase diffusion regime. We study the signatures of such a transition by combining the outcomes of Monte Carlo simulations with the analysis of the devices parameters, the critical current and the temperature behavior of the low voltage resistance $R_0$.
