We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger i
nhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample the X1+ lineshape and saturation broadening follows isolated atomic transition behaviour. This C-doped device structure is useful for single hole spin initialization, manipulation, and measurement.
We observe dressed states and quantum interference effects in a strongly driven three-level quantum dot ladder system. The effect of a strong coupling field on one dipole transition is measured by a weak probe field on the second dipole transition us
ing differential reflection. When the coupling energy is much larger than both the homoge-neous and inhomogeneous linewidths an Autler-Townes splitting is observed. Striking differences are observed when the transitions resonant with the strong and weak fields are swapped, particularly when the coupling energy is nearly equal to the measured linewidth. This result is attributed to quantum interference: a modest destructive or constructive interference is observed depending on the pump / probe geometry. The data demonstrate that coher-ence of both the bi-exciton and the exciton is maintained in this solid-state system, even under intense illumina-tion, which is crucial for prospects in quantum information processing and non-linear optical devices.
