Integrated quantum photonic circuits are becoming increasingly complex. Accurate calibration of device parameters and detailed characterization of the prepared quantum states are critically important for future progress. Here we report on an effectiv
e experimental calibration method based on Bayesian updating and Markov chain Monte Carlo integration. We use this calibration technique to characterize a two qubit chip and extract the reflectivities of its directional couplers. An average quantum state tomography fidelity of 93.79+/-1.05% against the four Bell states is achieved. Furthermore, comparing the measured density matrices against a model using the non-ideal device parameters derived from the calibration we achieve an average fidelity of 97.57+/-0.96%. This pinpoints non-ideality of chip parameters as a major factor in the decrease of Bell state fidelity. We also perform quantum state tomography for Bell states while continuously varying photon distinguishability and find excellent agreement with theory.
Quantum key distribution (QKD) is moving from research laboratories towards applications. As computing becomes more mobile, cashless as well as cardless payment solutions are introduced, and a need arises for incorporating QKD in a mobile device. Han
dheld devices present a particular challenge as the orientation and the phase of a qubit will depend on device motion. This problem is addressed by the reference frame independent (RFI) QKD scheme. The scheme tolerates an unknown phase between logical states that varies slowly compared to the rate of particle repetition. Here we experimentally demonstrate the feasibility of RFI QKD over a free-space link in a prepare and measure scheme using polarisation encoding. We extend the security analysis of the RFI QKD scheme to be able to deal with uncalibrated devices and a finite number of measurements. Together these advances are an important step towards mass production of handheld QKD devices.
We demonstrate passive harmonic mode-locking of a quantum well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a non-periodic patterning of the cavity effective index. B
y selecting six modes spaced at twice the fundamental mode spacing, near-transform limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.
The Parallel Nanowire Detector (PND) is a photon number resolving (PNR) detector which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the p
arallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. PNDs were fabricated on 3-4 nm thick NbN films grown on MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. PNDs showed a counting rate of 80 MHz and a pulse duration as low as 660ps full width at half maximum (FWHM). Building the histograms of the photoresponse peak, no multiplication noise buildup is observable. Electrical and optical equivalent models of the device were developed in order to study its working principle, define design guidelines, and develop an algorithm to estimate the photon number statistics of an unknown light. In particular, the modeling provides novel insight of the physical limit to the detection efficiency and to the reset time of these detectors. The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of th
e PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on ultrathin NbN films grown at a temperature compatible with monolithic integration. NbN films ranging from 150nm to 3nm in thickness were deposited by dc magne
tron sputtering on MgO substrates at 400C. The superconducting properties of NbN films were optimized studying the effects of deposition parameters on film properties. SSPDs were fabricated on high quality NbN films of different thickness (7 to 3nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300nm.
