The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande g tensor on electric fields should permit high-frequenc
y g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electrons spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a
hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic elec
tric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.
