This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evolution of the basic macrovariables: the electron drift velocity and the
non-equilibrium temperature are obtained theoretically by using a Non-Equilibrium Quantum Kinetic Theory, derived from the method of Nonequilibrium Statistical Operator (NSO). The dependence on the intensity and orientation of the applied electric field of this macrovariables and mobility are derived and analyzed. From the results obtained in this paper, the most attractive of these semiconductors for applications requiring greater electronic mobility is the polytype 4H-SiC with the electric field applied perpendicular to the c-axis.
In this work we describe the Non-Equilibrium Statistical Operator Method (NESOM). The NESOM is a powerful formalism that seems to offer an elegant and concise way for an analytical treatment in the theory of irreversible processes, adequate to deal w
ith a large class of experimental situations, and physically clear picture of irreversible processes. The method invented by D. N. Zubarev is also practical and efficient in the study of the optical and carrier dynamics in semiconductors. Keywords: nonequilibrium phenomena; kinetic theory; transport processes; irreversible processes.
Mastering semiconductor technology is essential to insert any country into the trends of the future, such as smart cities, internet of things, space exploration, etc. In this paper we present the growing annual revenue of the semiconductor industry i
n the last 20 years and comment on the importance of mastering semiconductor production technology and its implications for the development of a nation.
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinea
r quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations usingMonteCarlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations.The agreement between the results obtained using nonlinear quantum kinetic theory, with those ofMonte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.
Despite its importance, in the introductory disciplines of exact science courses, the demonstration of the Maxwell-Boltzmann velocity distribution law is not explained, only its final equation is shown. In order to fill this deficiency, in this work
we try to show in detail, in a very didactic way, the demonstration of such a law. For this, the kinetic theory of gases is initially introduced. The good agreement of the Maxwell-Boltzmann velocity distribution law with experimental results and its applicability limit is also presented.
In this work we describe the Correlative Method of Unsymmetrized Self-Consistent Field (CUSF). This method is based on a set of nonlinear integrodifferential equations for the one-particle configurational distribution functions and for the self-consi
stent potentials of the atoms. Here we present the fundamental concepts of the CUSF, the hypotheses of the method, the basic equations, the self-consistent potential, the thermodynamics of the anharmonic crystalline solids, and the quantum corrections in the quasi-classical approximation. Keywords: lattice theory and statistics; anharmonic crystals; thermodynamics.
