Since their theoretical prediction by Peierls in the 30s, charge density waves (CDW) have been one of the most commonly encountered electronic phases in low dimensional metallic systems. The instability mechanism originally proposed combines Fermi su
rface nesting and electron-phonon coupling but is, strictly speaking, only valid in one dimension. In higher dimensions, its relevance is questionable as sharp maxima in the static electronic susceptibility chi(q) are smeared out, and are, in many cases, unable to account for the periodicity of the observed charge modulations. Here, we investigate the quasi twodimensional LaAgSb2, which exhibits two CDW transitions, by a combination of diffuse xray scattering, inelastic x-ray scattering and ab initio calculations. We demonstrate that the CDW formation is driven by phonons softening. The corresponding Kohn anomalies are visualized in 3D through the momentum distribution of the x-ray diffuse scattering intensity. We show that they can be quantitatively accounted for by considering the electronic susceptibility calculated from a Dirac-like band, weighted by anisotropic electron-phonon coupling. This remarkable agreement sheds new light on the importance of Fermi surface nesting in CDW formation.
We make use of micro-magneto Raman scattering spectroscopy to probe magneto-phonon resonances (MPR) in suspended mono- to penta-layer graphene. MPR correspond to avoided crossings between zone-center optical phonons (G-mode) and optically-active inte
r Landau level (LL) transitions and provide a tool to perform LL spectroscopy at a fixed energy ($approx 197~rm{meV}$) set by the G-mode phonon. Using a single-particle effective bilayer model, we readily extract the velocity parameter associated with each MPR. A single velocity parameter slightly above the bulk graphite value suffices to fit all MPR for $Ngeq2$ layer systems. In contrast, in monolayer graphene, we find that the velocity parameter increases significantly from $(1.23pm 0.01) times 10^6~mathrm{m.s^{-1}}$ up to $(1.45pm0.02) times 10^6~mathrm{m.s^{-1}}$ as the first to third optically-active inter LL transition couple to the G-mode phonon. This result is understood as a signature of enhanced many-body effects in unscreened graphene.
We report experimental and theoretical studies on the magnetoelastic interactions in MnPS$_3$. Raman scattering response measured as a function of temperature shows a blue shift of the Raman active modes at 120.2 and 155.1 cm$^{-1}$, when the tempera
ture is raised across the antiferromagnetic-paramagnetic transition. Density functional theory (DFT) calculations have been performed to estimate the effective exchange interactions and calculate the Raman active phonon modes. The calculations lead to the conclusion that the peculiar behavior with temperature of the two low energy phonon modes can be explained by the symmetry of their corresponding normal coordinates which involve the virtual modification of the super-exchange angles associated with the leading antiferromagnetic (AFM) interactions.
Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low temperature in mag
netic fields below 50 mT, allowing thus to probe the nearest vicinity of the Dirac point and to estimate the conductivity in nearly undoped graphene. The carrier mobility is found to exceed 250,000 cm$^2$/(V.s). In the limit of high temperatures, the well-defined Landau level (LL) quantization is observed up to room temperature at magnetic fields below 1 T, a phenomenon unique in solid state systems. A negligible increase in the width of the cyclotron resonance lines with increasing temperature indicates that no important scattering mechanism is thermally activated, supporting recent expectations of high room-temperature mobilities in graphene.
High performance of InP-based quantum cascade lasers emitting at $lambda$ ~ 9$mu$m are reported. Thick electroplated gold layer was deposited on top of the laser to improve heat dissipation. With one facet high reflection coated, the devices produce
a maximum output power of 175mW at 40% duty cycle at room temperature and continuous-wave operation up to 278K.
