We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reve
als that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems.
The surface roughness of a recently exhumed strikeslip fault plane has been measured by three independent 3D portable laser scanners. Digital elevation models of several fault surface areas, from 1 m2 to 600 m2, have been measured at a resolution ran
ging from 5 mm to 80 mm. Out of plane height fluctuations are described by non-Gaussian distribution with exponential long range tails. Statistical scaling analyses show that the striated fault surface exhibits self-affine scaling invariance with a small but significant directional morphological anisotropy that can be described by two scaling roughness exponents, H1 = 0.7 in the direction of slip and H2 = 0.8 perpendicular to the direction of slip.
