We use first principles calculations to study structural, vibrational and superconducting properties of H$_2$S at pressures $Pge 200$ GPa. The inclusion of zero point energy leads to two different possible dissociations of H$_2$S, namely 3H$_2$S $to$
2H$_3$S + S and 5H$_2$S $to$ 3H$_3$S + HS$_2$, where both H$_3$S and HS$_2$ are metallic. For H$_3$S, we perform non-perturbative calculations of anharmonic effects within the self-consistent harmonic approximation and show that the harmonic approximation strongly overestimates the electron-phonon interaction ($lambdaapprox 2.64$ at 200 GPa) and T$_c$. Anharmonicity hardens HS bond-stretching modes and softens H--S bond-bending modes. As a result, the electron-phonon coupling is suppressed by $30%$ ($lambdaapprox 1.84$ at 200 GPa). Moreover, while at the harmonic level T$_c$ decreases with increasing pressure, the inclusion of anharmonicity leads to a T$_c$ that is almost independent of pressure. High pressure hydrogen sulfide is a strongly anharmonic superconductor.
Noble metals adopt close-packed structures at ambient pressure and rarely undergo structural transformation at high pressures. Platinum (Pt), in particular, is normally considered to be unreactive and is therefore not expected to form hydrides under
pressure. We predict that platinum hydride (PtH) has a lower enthalpy than its constituents solid Pt and molecular hydrogen at pressures above 21.5 GPa. We have calculated structural phase transitions from tetragonal to hexagonal close-packed or face-centered cubic (fcc) PtH between 70 and 80 GPa. Linear response calculations indicate that PtH is a superconductor at these pressures with a critical temperature of about 10--25 K. These findings help to shed light on recent observations of pressure-induced metallization and superconductivity in hydrogen-rich materials. We show that formation of fcc metal hydrides under pressure is common among noble metal hydrides and examine the possibility of superconductivity in these materials.
Defects in crystalline silicon consisting of a silicon self-interstitial atom and one, two, three, or four hydrogen atoms are studied within density-functional theory (DFT). We search for low-energy defects by starting from an ensemble of structures
in which the atomic positions in the defect region have been randomized. We then relax each structure to a minimum in the energy. We find a new defect consisting of a self-interstitial and one hydrogen atom (denoted by {I,H}) which has a higher symmetry and a lower energy than previously reported structures. We recover the {I,H_2} defect found in previous studies and confirm that it is the most stable such defect. Our best {I,H_3} defect has a slightly different structure and lower energy than the one previously reported, and our lowest energy {I,H_4} defect is different to those of previous studies.
A method to calculate NMR J-coupling constants from first principles in extended systems is presented. It is based on density functional theory and is formulated within a planewave-pseudopotential framework. The all-electron properties are recovered
using the projector augmented wave approach. The method is validated by comparison with existing quantum chemical calculations of solution-state systems and with experimental data. The approach has been applied to verify measured J-coupling in a silicophosphate structure, Si5O(PO4)6
