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High resolution laser-based angle-resolved photoemission measurements have been carried out on Sb(111) single crystal. Two kinds of Fermi surface sheets are observed that are derived from the topological surface states: one small hexagonal electron-l ike Fermi pocket around $Gamma$ point and the other six elongated lobes of hole-like Fermi pockets around the electron pocket. Clear Rashba-type band splitting due to the strong spin-orbit coupling is observed that is anisotropic in the momentum space. Our super-high-resolution ARPES measurements reveal no obvious kink in the surface band dispersions indicating a weak electron-phonon interaction in the surface states. In particular, the electron scattering rate for these topological surface states is nearly a constant over a large energy window near the Fermi level that is unusual in terms of the conventional picture.
The three-dimensional topological semimetals represent a new quantum state of matter. Distinct from the surface state in the topological insulators that exhibits linear dispersion in two-dimensional momentum plane, the three-dimensional semimetals ho st bulk band dispersions linearly along all directions, forming discrete Dirac cones in three-dimensional momentum space. In addition to the gapless points (Weyl/Dirac nodes) in the bulk, the three-dimensional Weyl/Dirac semimetals are also characterized by topologically protected surface state with Fermi arcs on their specific surface. The Weyl/Dirac semimetals have attracted much attention recently they provide a venue not only to explore unique quantum phenomena but also to show potential applications. While Cd3As2 is proposed to be a viable candidate of a Dirac semimetal, more experimental evidence and theoretical investigation are necessary to pin down its nature. In particular, the topological surface state, the hallmark of the three-dimensional semimetal, has not been observed in Cd3As2. Here we report the electronic structure of Cd3As2 investigated by angle-resolved photoemission measurements on the (112) crystal surface and detailed band structure calculations. The measured Fermi surface and band structure show a good agreement with the band structure calculations with two bulk Dirac-like bands approaching the Fermi level and forming Dirac points near the Brillouin zone center. Moreover, the topological surface state with a linear dispersion approaching the Fermi level is identified for the first time. These results provide strong experimental evidence on the nature of topologically non-trivial three-dimensional Dirac cones in Cd3As2.
Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal momentum. Here we report a new phenomenon of the spin texture locking with the orbital texture in a topological insulator Bi2Se3. We observe light-polarization-dependent spin texture of both the upper and lower Dirac cones that constitutes strong evidence of the orbital-dependent spin texture in Bi2Se3. The different spin texture detected in variable polarization geometry is the manifestation of the spin-orbital texture in the initial state combined with the photoemission matrix element effects. Our observations provide a new orbital degree of freedom and a new way of light manipulation in controlling the spin structure of the topological insulators that are important for their future applications in spin-related technologies.
Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving Dirac fermions that behave as massless relativistic particles. These Dirac fermions are responsible for achieving a number of nov el and exotic quantum phenomena in the topological insulators and for their potential applications in spintronics and quantum computations. It is thus essential to understand the electron dynamics of the Dirac fermions, i.e., how they interact with other electrons, phonons and disorders. Here we report super-high resolution angle-resolved photoemission studies on the Dirac fermion dynamics in the prototypical Bi2(Te,Se)3 topological insulators. We have directly revealed signatures of the electron-phonon coupling in these topological insulators and found that the electron-disorder interaction is the dominant factor in the scattering process. The Dirac fermion dynamics in Bi2(Te3-xSex) topological insulators can be tuned by varying the composition, x, or by controlling the charge carriers. Our findings provide crucial information in understanding the electron dynamics of the Dirac fermions in topological insulators and in engineering their surface state for fundamental studies and potential applications.
The topological insulators represent a unique state of matter where the bulk is insulating with an energy gap while the surface is metallic with a Dirac cone protected by the time reversal symmetry. These characteristics provide a venue to explore no vel quantum phenomena in fundamental physics and show potential applications in spintronics and quantum computing. One critical issue directly related with the applications as well as the fundamental studies is how the topological surface state will behave under ambient conditions (1 atmosphere air and room temperature). In this paper, we report high resolution angle-resolved photoemission measurements on the surface state of the prototypical topological insulators, Bi2Se3, Bi2Te3 and Bi2(Se0.4Te2.6), upon exposing to ambient conditions. We find that the topological order persists even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the surface of the topological insulators after the exposure which depends sensitively on the original composition, x, in Bi2(Se3-xTex). These rich information are crucial in utilizing the surface state and in probing its physical properties under ambient conditions.
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