Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivi
ty with critical temperatures Tc of 3.5 and3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a low Tc superconducting phase to a high Tc superconducting phase in which Tc reaches maximum values of 7.6 and 6.4 K for PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2, respectively. The pressure-induced transition is characterized by a rapid increase in Tc within a small range in pressure of ~0.3 GPa for both compounds. In the normal state of PrO0.5F0.5BiS2, the transition pressure Pt correlates with the pressure where the suppression of semiconducting behaviour saturates. In the normal state of NdO0.5F0.5BiS2, Pt is coincident with a semiconductor-metal transition. This behaviour is similar to the results recently reported for the LnO0.5F0.5BiS2 (Ln = La, Ce) compounds. We observe that Pt and the size of the jump in Tc between the two superconducting phases both scale with the lanthanide element in LnO0.5F0.5BiS2 (Ln = La, Ce, Pr, Nd).
Electrical resistivity measurements as a function of temperature between 1 K and 300 K were performed at various pressures up to 3 GPa on the superconducting layered compounds Ln(O0.5F0.5)BiS2 (Ln = La, Ce). At atmospheric pressure, La(O0.5F0.5)BiS2
and Ce(O0.5F0.5)BiS2 have superconducting critical temperatures, Tc, of 3.3 K and 2.3 K, respectively. For both compounds, the superconducting critical temperature Tc initially increases, reaches a maximum value of 10.1 K for La(O0.5F0.5)BiS2 and 6.7 K for CeO(0.5F0.5)BiS2, and then gradually decreases with increasing pressure. Both samples also exhibit transient behavior in the region between the lower Tc phase near atmospheric pressure and the higher Tc phase. This region is characterized by a broadening of the superconducting transition, in which Tc and the transition width, delta Tc, are reversible with increasing and decreasing pressure. There is also an appreciable pressure-induced and hysteretic suppression of semiconducting behavior up to the pressure at which the maximum value of Tc is found. At pressures above the value at which the maximum in Tc occurs, there is a gradual decrease of Tc and further suppression of the semiconducting behavior with pressure, both of which are reversible.
