We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin rel
axation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the InP nanowire. The longitudinal exciton spin relaxation time was evaluated by the degree of the random polarization of emission originating from exciton state confined in a single nanowire quantum dots by using Mueller Calculus based on Stokes parameters representation.
Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced
that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV.
