Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a hetero
epitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: ($i$) an $in:situ$ hydrogen-Si $(001)$ passivation and ($ii$) the application of oxygen-protective Eu monolayers --- without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime --- and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si $(001)$ in order to create a strong spin filter contact to silicon.
We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO_(1-x)N_x f
ilms with good control over the films nitrogen concentration. In-situ x-ray photoemission spectroscopy reveals that nitrogen substitution is connected to the formation Eu3+ 4f6 and a corresponding decrease in the number of Eu2+ 4f7, indicating that nitrogen is being incorporated in its 3- oxidation state. While small amounts of Eu3+ in over-oxidized Eu_(1-delta)O thin films lead to a drastic suppression of the ferromagnetism, the formation of Eu3+ in EuO_(1-x)N_x still allows the ferromagnetic phase to exist with an unaffected Tc, thus providing an ideal model system to study the interplay between the magnetic f7 (J=7/2) and the non-magnetic f6 (J=0) states close to the Fermi level.
